VS-MUR1020CTPbF, VS-MUR1020CT-N3
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Vishay Semiconductors
Revision: 11-Aug-11
4
Document Number: 94076
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F/dt
Fig. 8 - Typical Stored Charge vs. dI
F/dt
Note
(1)
Formula used: TC
= T
J
- (Pd + Pd
REV) x RthJC;
Pd = Forward power loss = IF(AV)
x V
FM
at (I
F(AV)/D) (see fig. 6);
PdREV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
02468
180
170
160
150
140
130
IF(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
See note (1)
Square wave (D = 0.50)
Rated VR
applied
DC
01234 6785
7
4
3
2
1
0
IF(AV)
- Average Forward Current (A)
Average Power Loss (W)
6
5
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
t
rr
(ns)
100 1000
dIF/dt (A/μs)
40
50
30
20
10
IF
= 10 A
IF
= 5 A
VR
= 160 V
TJ
= 125 °C
TJ
= 25 °C
160
0
100 1000
Q
rr
(nC)
dIF/dt (A/μs)
40
80
120
140
20
60
100
IF
= 10 A
IF
= 5 A
VR
= 160 V
TJ
= 125 °C
TJ
= 25 °C
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